| PART |
Description |
Maker |
| 2SB1197K A5800311 2SB1197KQ |
Low Frequency Transistor(-32V/ -0.8A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
From old datasheet system
Low Frequency Transistor(-32V, -0.8A)
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
Rohm
|
| 2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管（- 32V的，- 2A型）
|
Rohm Co., Ltd.
|
| 2SB1386 2SB1412 2SB1326 A5800356 2SB1436 |
From old datasheet system
Low Frequency Transistor(-20V/-5A)
Low Frequency Transistor(-20V,-5A) 低频晶体管（- 20V的，- 5A型）
|
Rohm
Toshiba, Corp.
|
| 2SC5434 2SC5434-T1 |
Reduced noise high frequency amplification transistor
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
NEC[NEC]
NEC Corp.
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| MP6X1 |
Medium Power Transistor (32V, 1A)
|
Rohm
|
| 2SD176609 |
Medium power transistor (32V, 2A)
|
Rohm
|
| 2SA1577 |
Medium Power Transistor (-32V, -05A)
|
Rohm
|
| 2SD1383K1 2SD1383K |
High-gain Amplifier Transistor (32V , 0.3A)
|
ROHM[Rohm]
|
| 2SD1383K-2 2SD1383K |
High-gain Amplifier Transistor (32V , 0.3A)
|
Rohm
|
